Component information

IRLU2705

IRLU2705 component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs
40mOhm @ 17A, 10V
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
2V @ 250µA
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 5 V
Packaging
Tube
Vgs (Max)
±16V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
68W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
55 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Supplier Device Package
IPAK
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA

Documentation and references

Distributor reference ↗

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