ISC016N08NM8SCATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 8

Part Status

Active

Rds On (Max) @ Id, Vgs

1.54mOhm @ 50A, 15V

Vgs(th) (Max) @ Id

3.5V @ 111µA

Gate Charge (Qg) (Max) @ Vgs

99 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7200 pF @ 40 V

FET Type

N-Channel

Power Dissipation (Max)

263W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

29A (Ta), 269A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 15V

Mounting Type

Surface Mount

Supplier Device Package

PG-WSON-8-2

Package / Case

8-PowerWDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)