ISC060N06NM6ATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 6

Part Status

Active

Rds On (Max) @ Id, Vgs

6mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.3V @ 14µA

Gate Charge (Qg) (Max) @ Vgs

15.5 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 30 V

FET Type

N-Channel

Power Dissipation (Max)

3W (Ta), 50W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

15.2A (Ta), 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)