ISC0805NLSATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 5

Part Status

Active

Vgs(th) (Max) @ Id

2.3V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

33 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2200 pF @ 50 V

Power Dissipation (Max)

2.5W (Ta), 74W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 50A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-46

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

ISC0805N