ISG0616N10NM5HSCATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Infineon Technologies

Series

OptiMOS™ 5

Part Status

Active

Rds On (Max) @ Id, Vgs

4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 50V

Power - Max

3W (Ta), 167W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Configuration

2 N-Channel (Half Bridge)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 139A (Tc)

Mounting Type

Surface Mount

Package / Case

10-PowerWDFN

Supplier Device Package

PG-WHITFN-10-1

Packaging

Tape & Reel (TR); Cut Tape (CT)