ISK018NE1LM7ATSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™ 7

Part Status

Active

Rds On (Max) @ Id, Vgs

1.8mOhm @ 20A, 7V

Vgs(th) (Max) @ Id

2V @ 106µA

Gate Charge (Qg) (Max) @ Vgs

13.6 nC @ 7 V

Vgs (Max)

±7V

Input Capacitance (Ciss) (Max) @ Vds

1600 pF @ 7.5 V

FET Type

N-Channel

Power Dissipation (Max)

2.1W (Ta), 39W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

15 V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 129A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-6-1

Package / Case

6-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)