ISP650P06NMXTSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 1.037mA

Gate Charge (Qg) (Max) @ Vgs

39 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600 pF @ 30 V

Power Dissipation (Max)

1.8W (Ta), 4.2W (Tc)

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 3.7A, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

ISP650