Component information
ISS55EP06LMXTSA1
ISS55EP06LMXTSA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2V @ 11µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 0.59 nC @ 10 V
- Series
- OptiMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 18 pF @ 30 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 400mW (Ta)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 60 V
- Supplier Device Package
- PG-SOT23-3-5
- Current - Continuous Drain (Id) @ 25°C
- 180mA (Ta)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Base Product Number
- ISS55EP06
- Rds On (Max) @ Id, Vgs
- 5.5Ohm @ 180mA, 10V
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ