ISZ15EP15LMATMA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

OptiMOS™

Part Status

Active

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 249µA

Gate Charge (Qg) (Max) @ Vgs

14 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

480 pF @ 75 V

FET Type

P-Channel

Power Dissipation (Max)

2.5W (Ta), 26.3W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

150 V

Current - Continuous Drain (Id) @ 25°C

820mA (Ta), 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8-26

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)