Component information

ISZ173N15NM6ATMA1

Infineon Technologies ISZ173N15NM6ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerTDFN. Supplier Device Package: PG-TSDSON-8 FL.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
OptiMOS™ 6
Part Status
Active
Rds On (Max) @ Id, Vgs
16.3mOhm @ 16A, 15V
Vgs(th) (Max) @ Id
4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
19.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 75 V
FET Type
N-Channel
Power Dissipation (Max)
2.5W (Ta), 94W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
7.9A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 15V
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8 FL
Package / Case
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)

Documentation and references

Manufacturer datasheet ↗

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