Component information
ISZ520N20NM6ATMA1
Infineon Technologies ISZ520N20NM6ATMA1: Single FETs, MOSFETs. Package / Case: 8-PowerVDFN. Supplier Device Package: PG-TSDSON-8-34.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- OptiMOS™ 6
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 47.8mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id
- 4.5V @ 31µA
- Gate Charge (Qg) (Max) @ Vgs
- 14.9 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 960 pF @ 100 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Ta), 88W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 200 V
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V, 15V
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TSDSON-8-34
- Package / Case
- 8-PowerVDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Documentation can be discussed with your inquiry.
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