Component information
IXFH32N100X
IXYS IXFH32N100X: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: TO-247.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- IXYS
- Series
- HiPerFET™, Ultra X
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 6V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs
- 130 nC @ 10 V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 4075 pF @ 25 V
- Power Dissipation (Max)
- 890W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 1000 V
- Current - Continuous Drain (Id) @ 25°C
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 220mOhm @ 16A, 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247
- Package / Case
- TO-247-3
- Packaging
- Tube
- Base Product Number
- IXFH32
Documentation and references
Documentation can be discussed with your inquiry.
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