Component information
IXTH180N10T
IXYS IXTH180N10T: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: TO-247 (IXTH).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- IXYS
- Series
- Trench
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 151 nC @ 10 V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 6900 pF @ 25 V
- Power Dissipation (Max)
- 480W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 6.4mOhm @ 25A, 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247 (IXTH)
- Package / Case
- TO-247-3
- Packaging
- Tube
- Base Product Number
- IXTH180
Documentation and references
Documentation can be discussed with your inquiry.
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