Component information
IXTQ26P20P
IXYS IXTQ26P20P: Single FETs, MOSFETs. Package / Case: TO-3P-3, SC-65-3. Supplier Device Package: TO-3P.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- IXYS
- Series
- PolarP™
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 56 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 2740 pF @ 25 V
- Power Dissipation (Max)
- 300W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 200 V
- Current - Continuous Drain (Id) @ 25°C
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 170mOhm @ 13A, 10V
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-3P
- Package / Case
- TO-3P-3, SC-65-3
- Packaging
- Tube
- Base Product Number
- IXTQ26
Documentation and references
Documentation can be discussed with your inquiry.
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