Component information
KSD560YTU
KSD560YTU component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 5000 @ 3A, 2V
- Packaging
- Tube
- Power - Max
- 1.5 W
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN - Darlington
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 5 A
- Package / Case
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max)
- 100 V
- Supplier Device Package
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 3mA, 3A
- Base Product Number
- KSD560
Documentation and references
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