Component information
KSP10TA
KSP10TA component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 350mW
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 4mA, 10V
- Packaging
- Cut Tape (CT); Tape & Box (TB)
- Operating Temperature
- 150°C (TJ)
- Part Status
- Active
- Mounting Type
- Through Hole
- Transistor Type
- NPN
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Voltage - Collector Emitter Breakdown (Max)
- 25V
- Supplier Device Package
- TO-92-3
- Frequency - Transition
- 650MHz
- Base Product Number
- KSP10
Documentation and references
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