Component information
KSP55TA
KSP55TA component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 100mA, 1V
- Mfr
- onsemi
- Power - Max
- 625 mW
- Packaging
- Cut Tape (CT); Tape & Box (TB)
- Frequency - Transition
- 50MHz
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 500 mA
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Supplier Device Package
- TO-92-3
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 100mA
- Base Product Number
- KSP55
- Current - Collector Cutoff (Max)
- 100nA
Documentation and references
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