Component information
LND150N3-G
LND150N3-G component information and product attributes.
Product information
- Manufacturer
- Microchip Technology
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 1000Ohm @ 500µA, 0V
- Mfr
- Microchip Technology
- Vgs (Max)
- ±20V
- Packaging
- Bag
- Input Capacitance (Ciss) (Max) @ Vds
- 10 pF @ 25 V
- Part Status
- Active
- Power Dissipation (Max)
- 740mW (Ta)
- FET Type
- N-Channel, Depletion Mode
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 500 V
- Supplier Device Package
- TO-92-3
- Current - Continuous Drain (Id) @ 25°C
- 30mA (Tj)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Drive Voltage (Max Rds On, Min Rds On)
- 0V
- Base Product Number
- LND150
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ