LND150N3-G-P002

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Microchip Technology

Part Status

Active

Rds On (Max) @ Id, Vgs

1000Ohm @ 500µA, 0V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10 pF @ 25 V

Power Dissipation (Max)

740mW (Ta)

FET Type

N-Channel, Depletion Mode

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500 V

Current - Continuous Drain (Id) @ 25°C

30mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

LND150