Component information
MBT35200MT1G
MBT35200MT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 1.5A, 1.5V
- Mfr
- onsemi
- Power - Max
- 625 mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 100MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 2 A
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Voltage - Collector Emitter Breakdown (Max)
- 35 V
- Supplier Device Package
- 6-TSOP
- Vce Saturation (Max) @ Ib, Ic
- 310mV @ 20mA, 2A
- Base Product Number
- MBT35200
- Current - Collector Cutoff (Max)
- 100nA
Documentation and references
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