Component information
MBT3946DW1T1G
MBT3946DW1T1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA, 1V
- Manufacturer
- onsemi
- Power - Max
- 150mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 300MHz, 250MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 200mA
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Voltage - Collector Emitter Breakdown (Max)
- 40V
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
- Base Product Number
- MBT3946
Documentation and references
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