Component information
MBT6429DW1T1G
MBT6429DW1T1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 500 @ 100µA, 5V
- Manufacturer
- onsemi
- Power - Max
- 150mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 700MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- 2 NPN (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 200mA
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Voltage - Collector Emitter Breakdown (Max)
- 45V
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 5mA, 100mA
- Base Product Number
- MBT6429
- Current - Collector Cutoff (Max)
- 100nA
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ