Component information
MC1413BDR2G
MC1413BDR2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 500µA, 350mA
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 350mA, 2V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Operating Temperature
- 150°C (TJ)
- Part Status
- Active
- Mounting Type
- Surface Mount
- Transistor Type
- 7 NPN Darlington
- Package / Case
- 16-SOIC (0.154", 3.90mm Width)
- Current - Collector (Ic) (Max)
- 500mA
- Supplier Device Package
- 16-SOIC
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Base Product Number
- MC1413
Documentation and references
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