Component information
MIMD10A-7-F
Diodes Incorporated MIMD10A-7-F: Bipolar Transistor Arrays, Pre-Biased. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: SOT-363.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Diodes Incorporated
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 250MHz, 200MHz
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Power - Max
- 200mW
- Current - Collector (Ic) (Max)
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 100Ohms, 10kOhms
- Resistor - Emitter Base (R2)
- 10kOhms
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SOT-363
- Packaging
- Tape & Reel (TR)
- Base Product Number
- MIMD10
Documentation and references
Documentation can be discussed with your inquiry.
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