Component information
MJ11032G
MJ11032G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 2mA
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 25A, 5V
- Packaging
- Tray
- Power - Max
- 300 W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 200°C (TJ)
- Transistor Type
- NPN - Darlington
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 50 A
- Package / Case
- TO-204AE
- Voltage - Collector Emitter Breakdown (Max)
- 120 V
- Supplier Device Package
- TO-204 (TO-3)
- Vce Saturation (Max) @ Ib, Ic
- 3.5V @ 500mA, 50A
- Base Product Number
- MJ11032
Documentation and references
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