Component information
MJD112-1G
MJD112-1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 2A, 3V
- Mfr
- onsemi
- Power - Max
- 1.75 W
- Packaging
- Tube
- Frequency - Transition
- 25MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- NPN - Darlington
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 2 A
- Package / Case
- TO-251-3 Short Leads, IPAK, TO-251AA
- Voltage - Collector Emitter Breakdown (Max)
- 100 V
- Supplier Device Package
- IPAK
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 40mA, 4A
- Base Product Number
- MJD112
- Current - Collector Cutoff (Max)
- 20µA
Documentation and references
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