Component information
MJD128T4G
MJD128T4G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 4A, 4V
- Mfr
- onsemi
- Power - Max
- 1.75 W
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 4MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- PNP - Darlington
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 8 A
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Voltage - Collector Emitter Breakdown (Max)
- 120 V
- Supplier Device Package
- DPAK
- Vce Saturation (Max) @ Ib, Ic
- 4V @ 80mA, 8A
- Base Product Number
- MJD128
- Current - Collector Cutoff (Max)
- 5mA
Documentation and references
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