Component information
MJE18006G
MJE18006G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100µA
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 6 @ 3A, 1V
- Series
- SWITCHMODE™
- Power - Max
- 100 W
- Packaging
- Tube
- Frequency - Transition
- 14MHz
- Part Status
- Obsolete
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 6 A
- Package / Case
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max)
- 450 V
- Supplier Device Package
- TO-220
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 600mA, 3A
- Base Product Number
- MJE18
Documentation and references
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