Component information
MMBTH10LT1G
MMBTH10LT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 225mW
- Manufacturer
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 4mA, 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Part Status
- Active
- Mounting Type
- Surface Mount
- Transistor Type
- NPN
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max)
- 25V
- Supplier Device Package
- SOT-23-3 (TO-236)
- Frequency - Transition
- 650MHz
- Base Product Number
- MMBTH10
Documentation and references
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