Component information
MMJT9435T3
MMJT9435T3 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 125 @ 800mA, 1V
- Mfr
- onsemi
- Power - Max
- 3 W
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 110MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 3 A
- Package / Case
- TO-261-4, TO-261AA
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Supplier Device Package
- SOT-223 (TO-261)
- Vce Saturation (Max) @ Ib, Ic
- 550mV @ 300mA, 3A
- Base Product Number
- MMJT94
Documentation and references
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