Component information
MPS6601G
onsemi MPS6601G: Single Bipolar Transistors. Package / Case: TO-226-3, TO-92-3 Long Body. Supplier Device Package: TO-92 (TO-226).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- onsemi
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 500mA, 1V
- Power - Max
- 625 mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Current - Collector (Ic) (Max)
- 1 A
- Voltage - Collector Emitter Breakdown (Max)
- 25 V
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max)
- 100nA
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Supplier Device Package
- TO-92 (TO-226)
- Packaging
- Bulk
- Base Product Number
- MPS660
Documentation and references
Documentation can be discussed with your inquiry.
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