Component information
MPSA29
MPSA29 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 10000 @ 100mA, 5V
- Mfr
- onsemi
- Power - Max
- 625 mW
- Packaging
- Bulk
- Frequency - Transition
- 125MHz
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN - Darlington
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 800 mA
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max)
- 100 V
- Supplier Device Package
- TO-92-3
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 100µA, 100mA
- Base Product Number
- MPSA29
- Current - Collector Cutoff (Max)
- 500nA
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ