Component information
MPSH10G
onsemi MPSH10G: Bipolar RF Transistors. Package / Case: TO-226-3, TO-92-3 Long Body. Supplier Device Package: TO-92 (TO-226).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Power - Max
- 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 4mA, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 25V
- Frequency - Transition
- 650MHz
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Supplier Device Package
- TO-92 (TO-226)
- Packaging
- Bulk
- Base Product Number
- MPSH10
Documentation and references
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