Component information
MPSH11
MPSH11 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 4mA, 10V
- Manufacturer
- onsemi
- Current - Collector (Ic) (Max)
- 50mA
- Packaging
- Bulk
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Transistor Type
- NPN
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max)
- 25V
- Supplier Device Package
- TO-92-3
- Frequency - Transition
- 650MHz
- Base Product Number
- MPSH11
- Power - Max
- 350mW
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ