Component information
MSCSM170HRM11NG
Microchip Technology MSCSM170HRM11NG: FET, MOSFET Arrays. Package / Case: Module. Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Microchip Technology
- Part Status
- Active
- Rds On (Max) @ Id, Vgs
- 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id
- 3.2V @ 10mA, 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs
- 712nC @ 20V, 464nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds
- 13200pF @ 1000V, 6040pF @ 1000V
- Technology
- Silicon Carbide (SiC)
- Power - Max
- 1012W (Tc), 662W (Tc)
- Configuration
- 4 N-Channel (Three Level Inverter)
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 1700V (1.7kV), 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 226A (Tc), 163A (Tc)
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Tube
Documentation and references
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