Component information
MSD602-RT1G
MSD602-RT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 150mA, 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 200 mW
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 500 mA
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Supplier Device Package
- SC-59
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 30mA, 300mA
- Base Product Number
- MSD602
Documentation and references
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