Component information
MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage MT3S111P(TE12L,F): Bipolar RF Transistors. Package / Case: TO-243AA. Supplier Device Package: PW-MINI.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- Power - Max
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Current - Collector (Ic) (Max)
- 100mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 6V
- Frequency - Transition
- 8GHz
- Noise Figure (dB Typ @ f)
- 1.25dB @ 1GHz
- Gain
- 10.5dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Supplier Device Package
- PW-MINI
- Packaging
- Tape & Reel (TR)
- Base Product Number
- MT3S111
Documentation and references
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