Component information
MT3S113(TE85L,F)
Toshiba Semiconductor and Storage MT3S113(TE85L,F): Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: S-Mini.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- Power - Max
- 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Current - Collector (Ic) (Max)
- 100mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5.3V
- Frequency - Transition
- 12.5GHz
- Noise Figure (dB Typ @ f)
- 1.45dB @ 1GHz
- Gain
- 11.8dB
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- S-Mini
- Packaging
- Tape & Reel (TR)
- Base Product Number
- MT3S113
Documentation and references
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