Component information
MT3S113TU,LF
Toshiba Semiconductor and Storage MT3S113TU,LF: Bipolar RF Transistors. Package / Case: 3-SMD, Flat Leads. Supplier Device Package: UFM.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- Power - Max
- 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Current - Collector (Ic) (Max)
- 100mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5.3V
- Frequency - Transition
- 11.2GHz
- Noise Figure (dB Typ @ f)
- 1.45dB @ 1GHz
- Gain
- 12.5dB
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Supplier Device Package
- UFM
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- MT3S113
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ