Component information
MUN2211
Huixin MUN2211: Single, Pre-Biased Bipolar Transistors. Voltage - Collector Emitter Breakdown (Max): 50 V. DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Huixin
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 246 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Documentation can be discussed with your inquiry.
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