Component information
MUN2233
Huixin MUN2233: Single, Pre-Biased Bipolar Transistors. Voltage - Collector Emitter Breakdown (Max): 50 V. DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Huixin
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)
- 500nA
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 246 mW
- Current - Collector (Ic) (Max)
- 100 mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ