Component information

NDD02N60ZT4G

NDD02N60ZT4G component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4.5V @ 50µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Packaging
Tape & Reel (TR)
Vgs (Max)
±30V
Part Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 25 V
FET Type
N-Channel
Power Dissipation (Max)
57W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Supplier Device Package
DPAK
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Base Product Number
NDD02

Documentation and references

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