Component information
NE66219-T1-A
CEL NE66219-T1-A: Bipolar RF Transistors. Package / Case: SOT-523. Supplier Device Package: SOT-523.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- CEL
- Part Status
- Obsolete
- Gain
- 14dB
- Power - Max
- 115mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 5mA, 2V
- Current - Collector (Ic) (Max)
- 35mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 3.3V
- Frequency - Transition
- 21GHz
- Noise Figure (dB Typ @ f)
- 1.2dB @ 2GHz
- Mounting Type
- Surface Mount
- Package / Case
- SOT-523
- Supplier Device Package
- SOT-523
- Packaging
- Tape & Reel (TR)
Documentation and references
Documentation can be discussed with your inquiry.
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