Component information
NE85619-T1
CEL NE85619-T1: Bipolar RF Transistors. Package / Case: SOT-523. Supplier Device Package: SOT-523.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- CEL
- Part Status
- Obsolete
- Power - Max
- 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 20mA, 10V
- Current - Collector (Ic) (Max)
- 100mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 4.5GHz
- Noise Figure (dB Typ @ f)
- 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
- Gain
- 6.5dB ~ 12.5dB
- Mounting Type
- Surface Mount
- Package / Case
- SOT-523
- Supplier Device Package
- SOT-523
- Packaging
- Tape & Reel (TR)
- Base Product Number
- NE85619
Documentation and references
Documentation can be discussed with your inquiry.
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