Component information
NESG2030M04-A
CEL NESG2030M04-A: Bipolar RF Transistors. Package / Case: SOT-343F. Supplier Device Package: M04.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- CEL
- Part Status
- Obsolete
- Power - Max
- 80mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 5mA, 2V
- Current - Collector (Ic) (Max)
- 35mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 2.3V
- Frequency - Transition
- 60GHz
- Noise Figure (dB Typ @ f)
- 0.9dB ~ 1.1dB @ 2GHz
- Gain
- 16dB
- Mounting Type
- Surface Mount
- Package / Case
- SOT-343F
- Supplier Device Package
- M04
- Packaging
- Bulk
- Base Product Number
- NESG2030
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ