Component information
NESG2101M05-T1-A
Renesas Electronics Corporation NESG2101M05-T1-A: Bipolar RF Transistors. Package / Case: SOT-343F. Supplier Device Package: M05.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Obsolete
- Gain
- 11dB ~ 19dB
- Power - Max
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 130 @ 15mA, 2V
- Current - Collector (Ic) (Max)
- 100mA
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5V
- Frequency - Transition
- 17GHz
- Noise Figure (dB Typ @ f)
- 0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
- Mounting Type
- Surface Mount
- Package / Case
- SOT-343F
- Supplier Device Package
- M05
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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