Component information
NESG2107M33-A
CEL NESG2107M33-A: Bipolar RF Transistors. Package / Case: 3-SMD, Flat Leads. Supplier Device Package: 3-SuperMiniMold (M33).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- CEL
- Part Status
- Obsolete
- Power - Max
- 130mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 140 @ 5mA, 1V
- Current - Collector (Ic) (Max)
- 100mA
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5V
- Frequency - Transition
- 10GHz
- Noise Figure (dB Typ @ f)
- 0.9dB ~ 1.5dB @ 2GHz
- Gain
- 7dB ~ 10dB
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Supplier Device Package
- 3-SuperMiniMold (M33)
- Packaging
- Bulk
- Base Product Number
- NESG2107
Documentation and references
Documentation can be discussed with your inquiry.
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