Component information
NESG220034-T1-A
Renesas Electronics Corporation NESG220034-T1-A: Bipolar RF Transistors. Package / Case: TO-243AA. Supplier Device Package: PW-MINI (SOT-89).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Active
- Gain
- 12dB
- Power - Max
- 886mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 140 @ 10mA, 5V
- Current - Collector (Ic) (Max)
- 200mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 5.5V
- Frequency - Transition
- 11.5GHz
- Noise Figure (dB Typ @ f)
- 0.9dB @ 1GHz
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Supplier Device Package
- PW-MINI (SOT-89)
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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