Component information
NESG340033-T1B-A
Renesas Electronics Corporation NESG340033-T1B-A: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: 3-MINIMOLD.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Active
- Gain
- 12dB
- Power - Max
- 480mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 15mA, 3.3V
- Current - Collector (Ic) (Max)
- 400mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 5.5V
- Frequency - Transition
- 10GHz
- Noise Figure (dB Typ @ f)
- 0.7dB @ 1GHz
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- 3-MINIMOLD
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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