Component information
NESG7030M04-A
CEL NESG7030M04-A: Bipolar RF Transistors. Package / Case: SOT-343F. Supplier Device Package: M04.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- CEL
- Part Status
- Obsolete
- Gain
- 14dB ~ 21dB
- Power - Max
- 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 5mA, 2V
- Current - Collector (Ic) (Max)
- 30mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 4.3V
- Frequency - Transition
- 5.8GHz
- Noise Figure (dB Typ @ f)
- 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
- Mounting Type
- Surface Mount
- Package / Case
- SOT-343F
- Supplier Device Package
- M04
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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